Home: Products > Laser Diodes > Broad Area Lasers > Specifications Broad Area
Diode Lasers, Multi Mode
Description: High power
devices with up to 1W at 740nm and 2W at 980nm. These diode lasers are
longitudinal and spatial multimode. The typical emitter width is 100µm. The
broad area laser chips are mounted as chip on carrier.
Model #
Lambda / nm
P / mW
Width / µm
Ith / mA
Iop / mA
Uop / V
Div. q_|_
Div. q||
Pol.
Efficency W/A
Pin- Code
BA-0740-1.0
740
1000
100
550
1800
2.5
25
8
TM
0.9
BA-0760-1.0
760
1000
100
500
1800
2.4
26
8
TM
0.8
BA-0790-1.5
790
1500
100
500
2000
2.2
25
8
TM
1.1
BA-0810-1.5
810
1500
100
500
2000
2.2
28
8
TM
1.1
BA-0835-1.5
835
1500
100
450
2000
2.2
24
8
TE
1.0
BA-0875-1.5
875
1500
100
450
2000
2.2
24
8
TE
1.0
BA-0920-1.5
920
1500
100
400
2800
2.0
40
8
TE
0.9
BA-0940-2.0
940
2000
100
400
2800
2.0
40
8
TE
0.9
BA-0980-2.0
980
2000
100
500
2800
2.0
30
8
TE
0.9
BA-1060-2.0
1060
2000
100
500
2800
2.0
39
8
TE
0.7
Lambda
Wavelength / nm
Uop Operation
Voltage / V
P
Output Power / mW
Div.q_|_ Beam
Divergence / FWHM
Width
Emitter Width / µm
Div.
q|| Beam
Divergence / FWHM
Ith
Threshold Current / mA
Pol. Polarization
Iop
Operation Current / mA
Pin
Code Type of
Laser
Carrier
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